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That process generates so-called displacement cascades containing the Frenkel pairs in the form of both interstitial atoms and vacancies (IAV) and their complexes (clusters) in the form of vacancy loops (or vacancy nanopores) as well as dislocations.
In the former case, the IAV pairs arise both at nano GBs and inside grains, whereas in the latter case, the vacancies come into being only at the GBs but interstitial atoms arise in nanograins.
Unusual behavior of the interstitial atoms and SFT in damage cascades [72].
From the general considerations, it is obvious that defect generation in SiC must be more complicated than in metals because of the presence of two types of mobile interstitial atoms (Si and C) and two types of low-mobile vacancies or their clusters.
On the other hand, model experiments for the Frenkel pairs IAV interaction with the GBs in FCC copper allowed suggesting another mechanism of such defects annihilation, namely at first boundaries are saturated with high-mobile interstitial atoms, but then their inverse emission and absorption by the vacancies in near-boundary zones take place [81].
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